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2025-12-16
新聞發布室
News of 400mW InGaAlAs-based CW LD+SOA
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By employing a proprietary epitaxial design, we effectively address the reliability challenges commonly associated with InGaAlAs materials. The use of InGaAlAs-based epitaxial structures in the CW LD + SOA significantly enhances the SOA gain, enabling an amplified output power of up to 400 mW

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